METALLURGICAL REACTIONS IN AU/(IN-GE) OHMIC CONTACTS TO GAAS

被引：7

作者：

GROVENOR, CRM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

THIN SOLID FILMS | 1983年 / 104卷 / 3-4期

关键词：

D O I：

10.1016/0040-6090(83)90584-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：409 / 418

页数：10

共 18 条

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[3] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J].

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STAPLES, JL .

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[4]

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[5]

CHRISTOU A, 1979, SOLID STATE ELECTRON, V22, P151

[6]

GROVENOR CRM, 1980, THESIS U OXFORD

[7]

HASTY TE, 1968, J APPL PHYS, V30, P4623

[8]

HEIBLUM M, 1972, SOLID STATE ELECTRON, V15, P601

[9] DISSOCIATION OF GAAS AND GA0.7AL0.3AS DURING ALLOYING OF GOLD CONTACT FILMS [J].

KINSBRON, E ;

GALLAGHER, PK ;

ENGLISH, AT .

SOLID-STATE ELECTRONICS, 1979, 22 (05) :517-&

[10] ELECTRON-MICROSCOPIC STUDY OF ALLOYING BEHAVIOR OF AU ON GAAS [J].

KUMAR, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) :713-716

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