FINE LINE LITHOGRAPHY USING ION-BEAMS

被引：12

作者：

ADESIDA, I ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON FACIL,ITHACA,NY 14853

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90496-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：923 / 928

页数：6

共 22 条

[1] MONTE-CARLO SIMULATION OF ION-BEAM PENETRATION IN SOLIDS [J].

ADESIDA, I ;

KARAPIPERIS, L .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 61 (3-4) :223-233

[2] SUBMICROMETER-GATE GAAS-FET FABRICATION USING MASKED ION-BEAM OPTICAL HYBRID LITHOGRAPHY [J].

ADESIDA, I ;

ZHANG, M ;

SADLER, R ;

TIBERIO, R ;

WOLF, ED .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1080-1083

[3] DRY DEVELOPMENT OF ION-BEAM EXPOSED PMMA RESIST [J].

ADESIDA, I ;

CHINN, JD ;

RATHBUN, L ;

WOLF, ED .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :666-671

[4]

ADESIDA I, UNPUB J VAC SCI TECH

[5]

ADESIDA I, 1983, J ELECTRON MAT, V4, P689

[6] HIGH-RESOLUTION PATTERNING OF SILICON BY SELECTIVE GALLIUM DOPING [J].

BERRY, IL ;

CAVIGLIA, AL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1059-1061

[7]

BROERS AN, 1981, J ELECTROCHEM SOC, V128, P167

[8]

ECKSTEIN W, 1979, IPP932 M PLANCK I PL

[9] X-RAY-LITHOGRAPHY AT - 100-A LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES [J].

FLANDERS, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1615-1619

[10] H-2 AND RARE-GAS FIELD-ION SOURCE WITH HIGH ANGULAR CURRENT [J].

HANSON, GR ;

SIEGEL, BM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1875-1878

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