COMPARISON OF P AND SB AS N-DOPANTS FOR SI MOLECULAR-BEAM EPITAXY

被引：30

作者：

NUTZEL, JF

ABSTREITER, G

机构：

[1] Walter-Schottky-Institut, Technische Universitat München, D-85748 Garching, Am Coulombwall

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 02期

关键词：

D O I：

10.1063/1.360286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation properties segregation, activation, and desorption in Si molecular beam epitaxy of phosphorus (P) are investigated experimentally in comparison to antimony (Sb) over a temperature range from 300 to 900°C with Secondary Ion Mass Spectroscopy and electrochemical Capacitance/Voltage measurements. P exhibits superior properties over the full temperature range. © 1995 American Institute of Physics.

引用

页码：937 / 940

页数：4

共 23 条

[1]

[Anonymous], 1982, ZAHLENWERTE FUNKTION, VIII

[2] THE INTERACTION OF SB4 MOLECULAR-BEAMS WITH SI(100) SURFACES - MODULATED-BEAM MASS-SPECTROMETRY AND THERMALLY STIMULATED DESORPTION STUDIES [J].