COMPARISON OF NEUTRON AND GAMMA-RAY DAMAGE IN N-TYPE SILICON

被引：36

作者：

STEIN, HJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 09期

关键词：

D O I：

10.1063/1.1708868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3382 / &

共 17 条

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[9] HALL EFFECT MEASUREMENT OF RADIATION DAMAGE + ANNEALING IN SI [J].

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[10] NATURE OF DEFECTS ARISING FROM FAST NEUTRON IRRADIATION OF SILICON SINGLE CRYSTALS [J].

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