EMISSION-SPECTRA OF SINGLE QUANTUM WELL LASERS WITH INHOMOGENEOUS CURRENT INJECTION

被引:6
作者
TOKUDA, Y
ABE, Y
MATSUI, T
KANAMOTO, K
TSUKADA, N
NAKAYAMA, T
机构
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D O I
10.1063/1.341911
中图分类号
O59 [应用物理学];
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页码:1022 / 1026
页数:5
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共 30 条
[1]   TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J].
CHIN, R ;
HOLONYAK, N ;
VOJAK, BA ;
HESS, K ;
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1980, 36 (01) :19-21
[2]  
DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21
[3]   CONTINUOUS ROOM-TEMPERATURE MULTIPLE-QUANTUM-WELL ALXGA1-XAS-GAAS INJECTION-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
DAPKUS, PD ;
HOLONYAK, N ;
KOLBAS, RM .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :487-489
[4]   BROAD-BAND TUNING (DELTA-E APPROXIMATELY 100 MEV) OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS WITH AN EXTERNAL GRATING [J].
EPLER, JE ;
HOLONYAK, N ;
BURNHAM, RD ;
LINDSTROM, C ;
STREIFER, W ;
PAOLI, TL .
APPLIED PHYSICS LETTERS, 1983, 43 (08) :740-742
[5]  
GOBEL EO, 1985, APPL PHYS LETT, V47, P781, DOI 10.1063/1.96036
[6]   BISTABILITY AND PULSATIONS IN SEMICONDUCTOR-LASERS WITH INHOMOGENEOUS CURRENT INJECTION [J].
HARDER, C ;
LAU, KY ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (09) :1351-1361
[7]   BANDFILLING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
REZEK, EA ;
CHIN, R ;
DUPUIS, RD ;
DAPKUS, PD .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5392-5397
[8]   QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
DUPUIS, RD ;
DAPKUS, PD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186
[9]   DYNAMIC BEHAVIOR OF A GAAS-ALGAAS MQW LASER DIODE [J].
IWAMURA, H ;
SAKU, T ;
ISHIBASHI, T ;
OTSUKA, K ;
HORIKOSHI, Y .
ELECTRONICS LETTERS, 1983, 19 (05) :180-181
[10]   POLARIZATION-DEPENDENT GAIN-CURRENT RELATIONSHIP IN GAAS-ALGAAS MQW LASER-DIODES [J].
KOBAYASHI, H ;
IWAMURA, H ;
SAKU, T ;
OTSUKA, K .
ELECTRONICS LETTERS, 1983, 19 (05) :166-168