MAGNETOTRANSISTOR IN CMOS TECHNOLOGY

被引：28

作者：

POPOVIC, RS ^{[1
]}

WIDMER, R ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,ETH HONGGERBERG,INST APPL PHYS,CH-8093 ZURICH,SWITZERLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 09期

关键词：

D O I：

10.1109/T-ED.1986.22667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1334 / 1340

页数：7

共 19 条

[1]

Davies L., 1970, P ICMCST SIDNEY, P34

[2] SILICON DEPLETION LAYER MAGNETOMETER [J].

FLYNN, JB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) :2750-&

[3]

HUDSON EC, 1968, Patent No. 3389230

[4] THEORETICAL-ANALYSIS OF HALL FACTOR AND HALL-MOBILITY IN P-TYPE SILICON [J].

LIN, JF ;

LI, SS ;

LINARES, LC ;

TENG, KW .

SOLID-STATE ELECTRONICS, 1981, 24 (09) :827-833

[5]

MITNIKOVA IM, 1978, SOV PHYS SEMICOND+, V12, P26

[6] IMPURITY AND LATTICE SCATTERING PARAMETERS AS DETERMINED FROM HALL AND MOBILITY ANALYSIS IN N-TYPE SILICON [J].

NORTON, P ;

BRAGGINS, T ;

LEVINSTEIN, H .

PHYSICAL REVIEW B, 1973, 8 (12) :5632-5653

[7] MAGNETODIODE MODEL [J].

PFLEIDERER, H .

SOLID-STATE ELECTRONICS, 1972, 15 (03) :335-+

[8] AN INTEGRATED SILICON MAGNETIC-FIELD SENSOR USING THE MAGNETODIODE PRINCIPLE [J].

POPOVIC, RS ;

BALTES, HP ;

RUDOLF, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) :286-291

[9] DUAL-COLLECTOR MAGNETOTRANSISTOR OPTIMIZED WITH RESPECT TO INJECTION MODULATION [J].

POPOVIC, RS ;

BALTES, HP .

SENSORS AND ACTUATORS, 1983, 4 (02) :155-163

[10]

POPOVIC RS, 1984, IEDM, P568

← 1 2 →