EFFECTS OF HCL AND C-12 ADDITIONS ON SILICON OXIDATION-KINETICS

被引：32

作者：

VANDERMEULEN, YJ ^{[1
]}

CAHILL, JG ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 20598 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 02期

关键词：

D O I：

10.1007/BF02652948

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：371 / 389

页数：19

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