QUANTUM WELL LASERS

被引：10

作者：

CHIU, LC ^{[1
]}

YARIV, A ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF LUMINESCENCE | 1985年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0022-2313(85)90077-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：551 / 561

页数：11

共 22 条

[1] TRANSIENT AND NOISE CHARACTERISTICS OF QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

ANDERSON, ER ;

VOJAK, BA ;

HOLONYAK, N ;

STILLMAN, GE ;

COLEMAN, JJ ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :585-587

[2] GAIN SPECTRA OF QUANTUM-WELL LASERS [J].

BURT, MG .

ELECTRONICS LETTERS, 1983, 19 (06) :210-211

[3] LINEWIDTH ENHANCEMENT FACTOR FOR QUANTUM-WELL LASERS [J].

BURT, MG .

ELECTRONICS LETTERS, 1984, 20 (01) :27-29

[4] GAIN AND CARRIER LIFETIME MEASUREMENTS IN ALGAAS SINGLE QUANTUM WELL LASERS [J].

DUTTA, NK ;

HARTMAN, RL ;

TSANG, WT .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (08) :1243-1246

[5] CALCULATED THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERS [J].

DUTTA, NK .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7211-7214

[6] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

HAKKI, BW ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306

[7]

HERSEE SD, 1984, APPL PHYS LETT, V44

[8] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR A QUANTUM-WELL HETEROSTRUCTURE LASER [J].

HESS, K ;

VOJAK, BA ;

HOLONYAK, N ;

CHIN, R .

SOLID-STATE ELECTRONICS, 1980, 23 (06) :585-589

[9] DYNAMIC BEHAVIOR OF A GAAS-ALGAAS MQW LASER DIODE [J].

IWAMURA, H ;

SAKU, T ;

ISHIBASHI, T ;

OTSUKA, K ;

HORIKOSHI, Y .

ELECTRONICS LETTERS, 1983, 19 (05) :180-181

[10] PHOTOEXCITED IN0.53GA0.47AS/INP QUANTUM-WELL LASERS WITH HIGH CHARACTERISTIC TEMPERATURES [J].

KODAMA, K ;

KOMENO, J ;

OZEKI, M .

ELECTRONICS LETTERS, 1984, 20 (01) :42-44

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