PHOTOEXCITED IN0.53GA0.47AS/INP QUANTUM-WELL LASERS WITH HIGH CHARACTERISTIC TEMPERATURES

被引：1

作者：

KODAMA, K

KOMENO, J

OZEKI, M

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 01期

关键词：

D O I：

10.1049/el:19840030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：42 / 44

页数：3

相关论文

共 8 条

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[2] OPTICALLY PUMPED IN0.53GA0.47AS/INP MQW LASERS GROWN BY CHLORIDE VAPOR-PHASE EPITAXY [J].

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[3] TDEG IN IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY CHLORIDE VPE [J].

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ELECTRONICS LETTERS, 1983, 19 (13) :473-474

[4] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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APPLIED PHYSICS LETTERS, 1983, 42 (10) :845-847

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[7] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1981, 39 (10) :786-788

[8] 1.3 MU-M INGAASP/INP MULTIQUANTUM-WELL LASERS GROWN BY VAPOR-PHASE EPITAXY [J].

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ELECTRONICS LETTERS, 1983, 19 (17) :700-701