SELF-COMPENSATION IN RAPID THERMAL ANNEALED SILICON-IMPLANTED GALLIUM-ARSENIDE

被引：25

作者：

TIKU, SK

DUNCAN, WM

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 09期

关键词：

D O I：

10.1149/1.2114327

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2237 / 2239

页数：3

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