ANALYSIS OF THE CHANNEL INVERSION LAYER CAPACITANCE IN THE VERY THIN-GATE IGFET

被引：22

作者：

OH, SY

CHOI, SG

SODINI, CG

MOLL, JL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 07期

关键词：

D O I：

10.1109/EDL.1983.25717

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：236 / 239

页数：4

共 11 条

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[9] CHARGE ACCUMULATION AND MOBILITY IN THIN DIELECTRIC MOS-TRANSISTORS [J].

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