LOW-TEMPERATURE (313-DEGREES-C) SILICON EPITAXIAL-GROWTH BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION WITH STAINLESS-STEEL MESH

被引：9

作者：

SHIEH, MD

LEE, CP

CHEN, CH

YEW, TR

KUNG, CY

机构：

[1] NATL TSING HUA UNIV,CTR MAT SCI,HSINCHU 300,TAIWAN

[2] NATL CHUNGHSING UNIV,DEPT ELECT ENGN,TAICHUNG,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 09期

关键词：

D O I：

10.1063/1.109787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter presents the low temperature silicon epitaxial growth on p-type, [100] Si wafers by plasma-enhanced chemical vapor deposition with a stainless steel mesh. Following a modified ex situ spin-etch cleaning and an in situ H-2 baking step, the epitaxial layer was grown at 313-degrees-C using SiH4 (30 sccm)/H-2 (22 sccm) with a pressure of 61 mTorr and a rf power of 10 W. Epitaxial layers were also grown at 323-degrees-C with different silane flow rates. The epitaxial film contains higher defect density when the silane flow rate is low.

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页码：1252 / 1254

页数：3

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