MECHANISM OF DRY ETCHING OF SILICON DIOXIDE - A CASE OF DIRECT REACTIVE ION ETCHING

[1] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 33 - 41

[2] DUFFY MT, 1983, RCA REV, V44, P157

[3] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[4] DRY ETCHING FOR VLSI - A REVIEW [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C62 - C66

[5] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[6] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 174 - 176

[7] HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554

[8] SELECTIVE REACTIVE ION-BEAM ETCHING OF SIO2 OVER POLYCRYSTALLINE SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 396 - 402

[9] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[10] REACTIVE SPUTTER ETCHING OF SI, SIO2, CR, AL, AND OTHER MATERIALS WITH GAS-MIXTURES BASED ON CF4 AND CL2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1408 - 1411

[1] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 33 - 41

[2] DUFFY MT, 1983, RCA REV, V44, P157

[3] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[4] DRY ETCHING FOR VLSI - A REVIEW [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C62 - C66

[5] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]

[6] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 174 - 176

[7] HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554

[8] SELECTIVE REACTIVE ION-BEAM ETCHING OF SIO2 OVER POLYCRYSTALLINE SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) : 396 - 402

[9] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J]. SOLID-STATE ELECTRONICS, 1975, 18 (12) : 1146 - 1147

[10] REACTIVE SPUTTER ETCHING OF SI, SIO2, CR, AL, AND OTHER MATERIALS WITH GAS-MIXTURES BASED ON CF4 AND CL2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1408 - 1411