MECHANISM OF DRY ETCHING OF SILICON DIOXIDE - A CASE OF DIRECT REACTIVE ION ETCHING

被引：59

作者：

STEINBRUCHEL, C

LEHMANN, HW

FRICK, K

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 01期

关键词：

D O I：

10.1149/1.2113757

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：180 / 186

页数：7

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