EXTENDED-STATE MOBILITY AND ITS RELATION TO THE TAIL-STATE DISTRIBUTION IN A-SI-H

被引：29

作者：

MICHIEL, H

ADRIAENSSENS, GJ

DAVIS, EA

机构：

[1] CATHOLIC UNIV LEUVEN,VASTE STOF & HOGE DRUK FYS LAB,B-3030 HEVERLE,BELGIUM

[2] UNIV LEICESTER,DEPT PHYS,LEICESTER LE1 7RH,ENGLAND

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.34.2486

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2486 / 2499

页数：14

共 39 条

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[6] ON THE SENSITIVITY OF TRANSIENT PHOTODECAY MEASUREMENTS AS A PROBE OF LOCALIZED STATE DISTRIBUTIONS IN AMORPHOUS-SEMICONDUCTORS
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[7] INFLUENCE OF VARIOUS DISTRIBUTIONS OF LOCALIZED STATES UPON TRANSIT PULSE DISPERSION IN AMORPHOUS-SEMICONDUCTORS
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (02): : 211 - 223
[8] COMMENTS ON THE CALCULATION OF THE EXTENDED STATE ELECTRON-MOBILITY IN AMORPHOUS-SILICON
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[J]. SOLID STATE COMMUNICATIONS, 1985, 54 (01) : 11 - 14
[9] TRANSIENT PHOTOCONDUCTIVITY AND THERMALIZATION IN AMORPHOUS-SEMICONDUCTORS
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05): : 471 - 480
[10] MARSHALL JM, 1985, PHYSICS DISORDERED M, P567

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