THE EFFECT OF RAPID THERMAL ANNEALING ON THE PRECIPITATION OF OXYGEN IN SILICON

被引：27

作者：

HAWKINS, GA

LAVINE, JP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.342589

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3644 / 3654

页数：11

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