HIGH-TEMPERATURE STRESS MEASUREMENT ON CHEMICAL-VAPOR-DEPOSITED TUNGSTEN SILICIDE AND TUNGSTEN FILMS

被引：20

作者：

SHIOYA, Y

IKEGAMI, K

MAEDA, M

YANAGIDA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 02期

关键词：

D O I：

10.1063/1.338259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：561 / 566

页数：6

共 9 条

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[7] ANALYSIS OF STRESS IN CHEMICAL VAPOR-DEPOSITION TUNGSTEN SILICIDE FILM [J].

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[8] ANALYSIS OF THE EFFECTS OF ANNEALING ON RESISTIVITY OF CHEMICAL VAPOR-DEPOSITION TUNGSTEN SILICIDE FILMS [J].

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