ANALYSIS OF THE EFFECTS OF ANNEALING ON RESISTIVITY OF CHEMICAL VAPOR-DEPOSITION TUNGSTEN SILICIDE FILMS

被引：36

作者：

SHIOYA, Y

MAEDA, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.337647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：327 / 333

页数：7

共 12 条

[1]

BRORS DL, 1983, SOLID STATE TECHNOL, V26, P183

[2] PROPERTIES OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J].

CHOW, TP ;

BOWER, DH ;

VANART, RL ;

KATZ, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) :952-956

[3] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].

CROWDER, BL ;

ZIRINSKY, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371

[4]

DHEURLE FM, 1980, J APPL PHYS, V51, P5976, DOI 10.1063/1.327517

[5] CHEMICAL BONDING AND ELECTRONIC-STRUCTURE OF PD2SI [J].

HO, PS ;

RUBLOFF, GW ;

LEWIS, JE ;

MORUZZI, VL ;

WILLIAMS, AR .

PHYSICAL REVIEW B, 1980, 22 (10) :4784-4790

[6] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J].

LOCKER, LD ;

CAPIO, CD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4366-4369

[7]

LYMAN T, 1973, METALS HDB, V8, P237

[8] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J].

MOHAMMADI, F ;

SARASWAT, KC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :450-454

[9] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792

[10]

MURARKA SP, 1983, SILICIDES VLSI APPLI, P41

← 1 2 →