CHARGE CONTROL MODEL OF INVERTED GAAS-ALGAAS MODULATION DOPED FETS (IMODFETS)

被引：6

作者：

LEE, K

SHUR, M

DRUMMOND, TJ

MORKOC, H

机构：

[1] UNIV ILLINOIS, DEPT ELECT ENGN, URBANA, IL 61801 USA

[2] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 02期

关键词：

D O I：

10.1116/1.582928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：113 / 116

页数：4

共 14 条

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[5] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].

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[10] DESIGN AND FABRICATION OF HIGH TRANSCONDUCTANCE MODULATION-DOPED (AL,GA)AS/GAAS FETS [J].

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