PROPERTIES OF A GAX IN1-X AS-GAAS ISOTYPE HETEROJUNCTION DIODE

被引：5

作者：

BHATTACHARYA, PK

BUHLMANN, HJ

ILEGEMS, M

SCHMID, P

MELCHIOR, H

机构：

[1] SWISS FED INST TECHNOL,INST APPL PHYS,CH-8093 ZURICH,SWITZERLAND

[2] SWISS FED INST TECHNOL,INST MICROELECTR,CH-1015 LAUSANNE,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 05期

关键词：

D O I：

10.1063/1.93567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：449 / 451

页数：3

共 13 条

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[9] AN N-IN0.53GA0.47AS-N-INP RECTIFIER [J].

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JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5838-5842

[10] ZN-DIFFUSED BACK-ILLUMINATED P-I-N PHOTO-DIODES IN INGAAS-INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1980, 37 (08) :730-731

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