共 35 条
- [1] TRAPPING AND RELEASE OF IMPLANTED D/H IONS IN FUSED-SILICA[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3): : 491 - 495ARNOLD, GWDOYLE, BL
- [2] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 614 - &BECKMANN, KHHARRICK, NJ
- [3] DEFECT TRAPPING OF ION-IMPLANTED DEUTERIUM IN NICKEL[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3536 - 3546BESENBACHER, FBOTTIGER, JMYERS, SM
- [4] SI-29 HYPERFINE-STRUCTURE OF UNPAIRED SPINS AT THE SI/SIO2 INTERFACE[J]. APPLIED PHYSICS LETTERS, 1983, 43 (12) : 1111 - 1113BROWER, KL
- [5] DEFECTS AND IMPURITIES IN THERMAL OXIDES ON SILICON[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 251 - 253BROWER, KLLENAHAN, PMDRESSENDORFER, PV
- [6] TRACER EVALUATION OF HYDROGEN IN STEAM-GROWN SIO2 FILMS[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 196 - &BURKHARD.PJ
- [7] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854CAPLAN, PJPOINDEXTER, EHDEAL, BERAZOUK, RR
- [8] CURRENT-INDUCED HYDROGEN MIGRATION AND INTERFACE TRAP GENERATION IN ALUMINUM SILICON DIOXIDE SILICON CAPACITORS[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) : 348 - 354FEIGL, FJGALE, RCHEW, HMAGEE, CWYOUNG, DR
- [9] HYDROGEN MIGRATION UNDER AVALANCHE INJECTION OF ELECTRONS IN SI METAL-OXIDE-SEMICONDUCTOR CAPACITORS[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6938 - 6942GALE, RFEIGL, FJMAGEE, CWYOUNG, DR