MODEL INVESTIGATIONS OF THE OXIDATION OF SILICON BY HIGH-DOSE IMPLANTATION

被引：12

作者：

JAGER, HU

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期

关键词：

D O I：

10.1016/0168-583X(86)90404-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：748 / 751

页数：4

共 18 条

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[10] A MODEL FOR THE OXIDATION OF SILICON BY HIGH-DOSE OXYGEN IMPLANTATION [J].

JAGER, HU ;

HENSEL, E ;

KREISSIG, U ;

SKORUPA, W ;

SOBESLAVSKY, E .

THIN SOLID FILMS, 1985, 127 (1-2) :159-169

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