A MODEL FOR THE OXIDATION OF SILICON BY HIGH-DOSE OXYGEN IMPLANTATION

被引：14

作者：

JAGER, HU

HENSEL, E

KREISSIG, U

SKORUPA, W

SOBESLAVSKY, E

机构：

来源：

THIN SOLID FILMS | 1985年 / 127卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(85)90221-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：159 / 169

页数：11

共 37 条

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[9] DIELECTRIC-BREAKDOWN PROPERTIES AND IV CHARACTERISTICS OF THIN SIO2-FILMS FORMED BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON [J].

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