CHANNEL LENGTH AND WIDTH DEPENDENCE OF HOT-CARRIER HARDNESS IN FLUORINATED MOSFETS

[1] CHIN MR, 1984, APPL PHYS LETT, V42, P883

[2] RADIATION RESPONSE OF MOS CAPACITORS CONTAINING FLUORINATED OXIDES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1190 - 1195

[3] HAMADA A, 1988, OCT FALL M JAP SOC A

[4] HOT-ELECTRON INDUCED INTERFACE TRAPS IN METAL/SIO2/SI CAPACITORS - THE EFFECT OF GATE-INDUCED STRAIN [J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1208 - 1210

[5] OXIDATION-INDUCED STRESS IN A LOCOS STRUCTURE [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) : 368 - 370

[6] MECHANICAL-STRESS DEPENDENCE OF RADIATION EFFECTS IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1210 - 1215

[7] EMISSION PROBABILITY OF HOT-ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 286 - 293

[8] DRAMATIC IMPROVEMENT OF HOT-ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS STRUCTURES CONTAINING F OR CL IN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) : 38 - 40

[9] HOT-ELECTRON HARDENED SI-GATE MOSFET UTILIZING F-IMPLANTATION [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (04) : 141 - 143

[10] Srinivasan V., 1980, International Electron Devices Meeting. Technical Digest, P740

[1] CHIN MR, 1984, APPL PHYS LETT, V42, P883

[2] RADIATION RESPONSE OF MOS CAPACITORS CONTAINING FLUORINATED OXIDES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1190 - 1195

[3] HAMADA A, 1988, OCT FALL M JAP SOC A

[4] HOT-ELECTRON INDUCED INTERFACE TRAPS IN METAL/SIO2/SI CAPACITORS - THE EFFECT OF GATE-INDUCED STRAIN [J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1208 - 1210

[5] OXIDATION-INDUCED STRESS IN A LOCOS STRUCTURE [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) : 368 - 370

[6] MECHANICAL-STRESS DEPENDENCE OF RADIATION EFFECTS IN MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) : 1210 - 1215

[7] EMISSION PROBABILITY OF HOT-ELECTRONS FROM SILICON INTO SILICON DIOXIDE [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) : 286 - 293

[8] DRAMATIC IMPROVEMENT OF HOT-ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS STRUCTURES CONTAINING F OR CL IN SIO2 [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) : 38 - 40

[9] HOT-ELECTRON HARDENED SI-GATE MOSFET UTILIZING F-IMPLANTATION [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (04) : 141 - 143

[10] Srinivasan V., 1980, International Electron Devices Meeting. Technical Digest, P740