DEPENDENCE OF MINIMUM LINEWIDTH ON ELECTRON-BEAM PROPERTIES IN SUBMICRON LITHOGRAPHY USING A RECTANGULAR BEAM

被引：4

作者：

OKUBO, T

SAITO, K

TAKAMOTO, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.583596

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：682 / 685

页数：4

共 7 条

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[6] VOLTAGE DEPENDENCE OF PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY
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[7] PATTERN FIDELITY IN SUB-MICRON LITHOGRAPHY WITH A RECTANGULAR ELECTRON-BEAM
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