SURFACE CHEMICAL-STATES ON 3C-SIC/SI EPILAYERS

被引：22

作者：

WEE, ATS ^{[1
]}

FENG, ZC ^{[1
]}

HNG, HH ^{[1
]}

TAN, KL ^{[1
]}

TIN, CC ^{[1
]}

HU, R ^{[1
]}

COSTON, R ^{[1
]}

机构：

[1] AUBURN UNIV,DEPT PHYS,AUBURN,AL 36849

来源：

APPLIED SURFACE SCIENCE | 1994年 / 81卷 / 04期

关键词：

D O I：

10.1016/0169-4332(94)90041-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A series of 3C-SiC/Si(100) films grown by chemical vapour deposition (CVD) with different growth times and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiOx where x < 2) and unreacted CH. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS. The results are discussed in terms of the three-step CVD growth process, namely, etching, buffer layer formation, and single-crystal 3C-SiC growth.

引用

页码：377 / 385

页数：9

共 17 条

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