INTERFACE STRUCTURES IN BETA-SILICON CARBIDE THIN-FILMS

[1] CHEMICALLY-FORMED BUFFER LAYERS FOR GROWTH OF CUBIC SILICON-CARBIDE ON SILICON SINGLE-CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 291 - 294

[2] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[3] STUDIES OF SIC FORMATION ON SI (100) BY CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2771 - 2778

[4] GROWTH MECHANISM OF POLYCRYSTALLINE BETA-SIC LAYERS ON SILICON SUBSTRATE [J]. APPLIED PHYSICS LETTERS, 1972, 21 (02) : 67 - &

[5] Kim H.-J., UNPUB

[6] THERMAL-STRESSES IN HETEROEPITAXIAL BETA SILICON-CARBIDE THIN-FILMS GROWN ON SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 3014 - 3018

[7] LIAW HP, 1985, J ELECTROCHEM SOC, V132, P642

[8] CONVERSION OF SI TO EPITAXIAL SIC BY REACTION WITH C2H2 [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1075 - 1084

[9] WATER IN SILICA GLASS [J]. TRANSACTIONS OF THE FARADAY SOCIETY, 1961, 57 (08): : 1208 - &

[10] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2674 - 2680

[1] CHEMICALLY-FORMED BUFFER LAYERS FOR GROWTH OF CUBIC SILICON-CARBIDE ON SILICON SINGLE-CRYSTALS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 291 - 294

[2] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[3] STUDIES OF SIC FORMATION ON SI (100) BY CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2771 - 2778

[4] GROWTH MECHANISM OF POLYCRYSTALLINE BETA-SIC LAYERS ON SILICON SUBSTRATE [J]. APPLIED PHYSICS LETTERS, 1972, 21 (02) : 67 - &

[5] Kim H.-J., UNPUB

[6] THERMAL-STRESSES IN HETEROEPITAXIAL BETA SILICON-CARBIDE THIN-FILMS GROWN ON SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 3014 - 3018

[7] LIAW HP, 1985, J ELECTROCHEM SOC, V132, P642

[8] CONVERSION OF SI TO EPITAXIAL SIC BY REACTION WITH C2H2 [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1075 - 1084

[9] WATER IN SILICA GLASS [J]. TRANSACTIONS OF THE FARADAY SOCIETY, 1961, 57 (08): : 1208 - &

[10] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2674 - 2680