GROWTH OF GAAS/CA0.45SR0.55F2/GAAS STRUCTURES BY MOLECULAR-BEAM EPITAXY

被引：3

作者：

HORNG, S ^{[1
]}

KAHN, A ^{[1
]}

WRENN, C ^{[1
]}

PFEFFER, R ^{[1
]}

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07724

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(91)90184-W

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lattice-matched GaAs/Ca0.45Sr0.55F2/GaAs structures are grown by molecular beam epitaxy on GaAs(100) substrates. The surface morphology and crystallinity of each layer are studied as a function of growth temperature. The best fluoride layers are grown with a substrate temperature of about 530-degrees-C and show excellent crystallinity (chi-min = 7% in ion channeling). The best GaAs layers are obtained around 600-degrees-C and show medium bulk crystallinity (chi-min = 30%). Electron beam irradiation of the fluoride surface considerably improves the GaAs surface morphology.

引用

页码：263 / 267

页数：5

共 15 条

[1] PHOTOEMISSION-STUDY OF THE FORMATION OF THE CAF2/GAAS(100) INTERFACE [J].