SIMS ANALYSIS OF ISOTOPIC IMPURITIES IN ION IMPLANTS

被引:5
作者
SYKES, DE [1 ]
BLUNT, RT [1 ]
机构
[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND
关键词
D O I
10.1016/0042-207X(86)90155-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1001 / 1003
页数:3
相关论文
共 7 条
[1]   RECOIL PROFILES PRODUCED BY ION-IMPLANTATION THROUGH DIELECTRIC LAYERS [J].
BLUNT, RT ;
SWEDA, R ;
SANDERS, IR .
VACUUM, 1984, 34 (1-2) :281-284
[2]  
BLUNT RT, UNPUB
[3]   COMPENSATION IN N-TYPE GAAS RESULTING FROM NITROGEN ION-IMPLANTATION [J].
DUNCAN, WM ;
MATTESON, S .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1059-1062
[4]   ION-BEAM STUDIES .4. USE OF MULTIPLY-CHARGED AND POLYATOMIC IONS IN AN IMPLANTATION ACCELERATOR [J].
FREEMAN, JH ;
CHIVERS, DJ ;
GARD, GA .
NUCLEAR INSTRUMENTS & METHODS, 1977, 143 (01) :99-115
[5]   ISOTOPE CONTAMINATION AND ELECTROMAGNETIC SEPARATOR PERFORMANCE [J].
FREEMAN, JH .
NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC) :49-&
[6]   DOSIMETRY MEASUREMENT IN ION IMPLANTERS [J].
JAMBA, DM .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 189 (01) :253-263
[7]  
MATTESON S, 1984, J VAC SCI TECHNOL, V132, P145