THE ORIGIN OF PERSISTENT PHOTOCONDUCTANCE IN DOPING-MODULATED AND COMPENSATED A-SI-H

被引：11

作者：

HAMED, A

FRITZSCHE, H

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90698-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：717 / 719

页数：3

共 20 条

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[7] EVIDENCE FOR HYDROGEN MOTION IN ANNEALING OF LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

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[9] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J].

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[10] EXCITATION AND TEMPERATURE-DEPENDENCE OF THE PHOTOINDUCED EXCESS CONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SILICON [J].

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