NUMERICAL MODELING OF SILICON PHOTODIODES FOR HIGH-ACCURACY APPLICATIONS .1. SIMULATION PROGRAMS

被引：9

作者：

GEIST, J ^{[1
]}

CHANDLERHOROWITZ, D ^{[1
]}

ROBINSON, AM ^{[1
]}

JAMES, CR ^{[1
]}

机构：

[1] UNIV ALBERTA, ELECT ENGN, EDMONTON T6G 2G7, ALBERTA, CANADA

来源：

JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY | 1991年 / 96卷 / 04期

关键词：

HIGH ACCURACY; INTERNAL QUANTUM EFFICIENCY; PC-1D; PHOTODIODE MODELING; SILICON PHOTODIODES;

D O I：

10.6028/jres.096.023

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D's standard user interface.

引用

页码：463 / 469

页数：7

共 15 条

[1] PC-1D VERSION 2-ENHANCED NUMERICAL SOLAR-CELL MODELING [J].