DESIGN-MODEL FOR BULK CMOS SCALING ENABLING ACCURATE LATCHUP PREDICTION

被引：17

作者：

WIEDER, AW

WERNER, C

HARTER, J

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 03期

关键词：

D O I：

10.1109/T-ED.1983.21107

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：240 / 245

页数：6

共 10 条

[1]

ANTONIADIS DA, 1978, 50192 STANF U STANF

[2]

CAUGHEY DM, 1967, P IEEE, P55

[3] DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1. [J].

DANNHAUSER, F .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1371-+

[4]

ENGL WL, 1979, NUMERICAL ANAL SEMIC

[5]

ENGL WL, 1977, PROCESS DEVICE MODEL

[6]

ESTREICH DB, 1980, THESIS STANFORD U ST

[7] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS [J].

GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) :455-&

[8] LATCH-UP CONTROL IN CMOS INTEGRATED-CIRCUITS [J].

OCHOA, A ;

DAWES, W ;

ESTREICH, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :5065-5068

[9] LATCH-UP ELIMINATION IN BULK CMOS LSI CIRCUITS [J].

SCHROEDER, JE ;

OCHOA, A ;

DRESSENDORFER, PV .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1735-1738

[10] EMITTER EFFECTS IN SHALLOW BIPOLAR-DEVICES - MEASUREMENTS AND CONSEQUENCES [J].

WIEDER, AW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1402-1408

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