A MOLECULAR AND ION-BEAM EPITAXY SYSTEM FOR THE GROWTH OF III-V-COMPOUND SEMICONDUCTORS USING A MASS-SEPARATED, LOW-ENERGY GROUP-V ION-BEAM

被引：12

作者：

SHIMIZU, S ^{[1
]}

TSUKAKOSHI, O ^{[1
]}

KOMIYA, S ^{[1
]}

MAKITA, Y ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 09期

关键词：

D O I：

10.1143/JJAP.24.1130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1130 / 1140

页数：11

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