SOME CHARACTERISTIC PROPERTIES OF THERMAL DONOR FORMATION IN OXYGEN-CONTAINING SILICON AT 450-DEGREES-C

被引：3

作者：

BABICH, VM

DOTSENKO, YP

KOVALCHUK, VB

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 86卷 / 02期

关键词：

D O I：

10.1002/pssa.2210860248

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K91 / K94

页数：4

共 12 条

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[9] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON - NUCLEATION AND GROWTH-BEHAVIOR [J].

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