FUNDAMENTAL-ASPECTS OF ION-BEAM MIXING

[41] ATOMIC REARRANGEMENTS IN ORDERED FCC ALLOYS DURING NEUTRON-IRRADIATION [J]. METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1978, 9 (12): : 1729 - 1737

[42] ASPECTS OF THE THEORETICAL DESCRIPTION OF BALLISTIC ATOMIC MIXING [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 684 - 693

[43] LOMER WM, 1954, AERE TR1540 REP

[44] LUCASSON P, 1976, FUNDAMENTAL ASPECTS, P42

[45] DIRECT MEASUREMENT OF SMALL DIFFUSION-COEFFICIENTS WITH SECONDARY ION MASS-SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7551 - 7557

[46] ION-BEAM MIXING OF MARKER LAYERS IN AL AND SI [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 622 - 625

[47] ION-BEAM MIXING IN AMORPHOUS-SILICON .2. THEORETICAL INTERPRETATION [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 53 - 61

[48] ION-INDUCED SILICIDE FORMATION IN NIOBIUM THIN-FILMS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 217 - 226

[49] ION BEAM MIXING IN AMORPHOUS SILICON - 1. EXPERIMENTAL INVESTIGATION. [J]. Nuclear instruments and methods, 1981, 182 /183 (pt 1): : 43 - 51

[50] ION-BEAM-INDUCED REACTIONS IN METAL-SEMICONDUCTOR AND METAL-METAL THIN-FILM STRUCTURES [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 1 - 13

[41] ATOMIC REARRANGEMENTS IN ORDERED FCC ALLOYS DURING NEUTRON-IRRADIATION [J]. METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 1978, 9 (12): : 1729 - 1737

[42] ASPECTS OF THE THEORETICAL DESCRIPTION OF BALLISTIC ATOMIC MIXING [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 684 - 693

[43] LOMER WM, 1954, AERE TR1540 REP

[44] LUCASSON P, 1976, FUNDAMENTAL ASPECTS, P42

[45] DIRECT MEASUREMENT OF SMALL DIFFUSION-COEFFICIENTS WITH SECONDARY ION MASS-SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7551 - 7557

[46] ION-BEAM MIXING OF MARKER LAYERS IN AL AND SI [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 622 - 625

[47] ION-BEAM MIXING IN AMORPHOUS-SILICON .2. THEORETICAL INTERPRETATION [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 53 - 61

[48] ION-INDUCED SILICIDE FORMATION IN NIOBIUM THIN-FILMS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 217 - 226

[49] ION BEAM MIXING IN AMORPHOUS SILICON - 1. EXPERIMENTAL INVESTIGATION. [J]. Nuclear instruments and methods, 1981, 182 /183 (pt 1): : 43 - 51

[50] ION-BEAM-INDUCED REACTIONS IN METAL-SEMICONDUCTOR AND METAL-METAL THIN-FILM STRUCTURES [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 1 - 13