ESTIMATION OF THE BAND-GAP OF INPO4

被引：19

作者：

WAGER, JF

WILMSEN, CW

KAZMERSKI, LL

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 07期

关键词：

D O I：

10.1063/1.94003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：589 / 591

页数：3

共 9 条

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CHYE, PW ;

SU, CY ;

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GARNER, CM ;

PIANETTA, P ;

SPICER, WE .

SURFACE SCIENCE, 1979, 88 (2-3) :439-460

[2] PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS [J].

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PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1620-1623

[3]

MCLAREN JV, UNPUB

[4] RAMAN-SCATTERING STUDY OF THE THERMAL-OXIDATION OF INP [J].

SCHWARTZ, GP ;

SUNDER, WA ;

GRIFFITHS, JE .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :925-927

[5] ELECTRONIC SURFACE PROPERTIES OF GA AND IN CONTAINING 3-5 COMPOUNDS [J].

VANLAAR, J ;

HUIJSER, A ;

VANROOY, TL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :894-898

[6] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SIO2/INP INTERFACE [J].

WAGER, JF ;

WILMSEN, CW .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5789-5797

[7] OXIDATION OF INP IN A PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION REACTOR [J].

WAGER, JF ;

MAKKY, WH ;

WILMSEN, CW ;

MEINERS, LG .

THIN SOLID FILMS, 1982, 95 (04) :343-350

[8] OPTICAL PROPERTIES OF INDIUM OXIDE [J].

WEIHER, RL ;

LEY, RP .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :299-&

[9] ANALYSIS OF OXIDE-SEMICONDUCTOR INTERFACE USING AUGER AND ESCA AS APPLIED TO INP AND GAAS [J].

WILMSEN, CW ;

KEE, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1513-1517

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