TEMPERATURE-DEPENDENT TRANSPORT MEASUREMENTS ON STRAINED SI/SI1-XGEX RESONANT TUNNELING DEVICES

被引：14

作者：

GENNSER, U ^{[1
]}

KESAN, VP ^{[1
]}

IYER, SS ^{[1
]}

BUCELOT, TJ ^{[1
]}

YANG, ES ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1116/1.585777

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature dependent transport through strained Si/SiGe hole resonant tunneling diodes has been studied. A quantitative measure of the different current components due to the conduction through the light hole and heavy hole resonant states at any particular bias and temperature has been obtained, and energy values for states in the SiGe well have been extracted. We also show that the quenching of the negative differential resistance at room temperature in hole resonant tunneling diodes is due to thermally assisted tunneling through higher resonant states.

引用

页码：2059 / 2063

页数：5

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