GAP AND GAAS FILMS GROWN BY VACUUM CHEMICAL EPITAXY USING TEGA AND TMGA SOURCES

被引：8

作者：

FRAAS, LM

MCLEOD, PS

PARTAIN, LD

WEISS, RE

CAPE, JA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90328-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：386 / 391

页数：6

共 8 条

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FRAAS, LM ;

MCLEOD, PS ;

PARTAIN, LD ;

CAPE, JA .

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[3] EPITAXIAL-FILMS GROWN BY VACUUM MOCVD [J].

FRAAS, LM ;

MCLEOD, PS ;

CAPE, JA ;

PARTAIN, LD .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :490-496

[4] A NEW LOW-TEMPERATURE III-V MULTILAYER GROWTH TECHNIQUE - VACUUM METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FRAAS, LM .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6939-6343

[5] GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS [J].

PANISH, MB ;

TEMKIN, H ;

SUMSKI, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :657-665

[6]

PARTAIN LD, UNPUB

[7] METALORGANIC CVD OF GAAS IN A MOLECULAR-BEAM SYSTEM [J].

VEUHOFF, E ;

PLETSCHEN, W ;

BALK, P ;

LUTH, H .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :30-34

[8]

WEYERS M, 1986, J ELECTRON MATER, V2, P57

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