DETECTION OF ANOMALOUS DEFECT-ENHANCED DIFFUSION USING ADVANCED SPREADING RESISTANCE MEASUREMENTS AND ANALYSIS

被引：11

作者：

WEINZIERL, SR ^{[1
]}

HILLARD, RJ ^{[1
]}

HEDDLESON, JM ^{[1
]}

RAICHOUDHURY, P ^{[1
]}

MAZUR, RG ^{[1
]}

OSBURN, CM ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 01期

关键词：

D O I：

10.1116/1.587161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advanced spreading resistance measurements and analysis techniques are used to determine the dopant profiles in two ultra-shallow silicon metal-oxide-semiconductor source/drain structures which were germanium preamorphized prior to implant. Although the two structures differ only slightly in their anneal temperature and time, there is a significant difference in the metallurgical junction depths of the implants. It is proposed that the difference in junction depths is related to defect-enhanced transient diffusion.

引用

页码：322 / 326

页数：5

共 13 条

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