HIGH-PRESSURE STUDY OF SOLID-PHASE EPITAXIAL REGROWTH IN IMPLANTED AMORPHOUS GAAS

被引：3

作者：

LICOPPE, C

SAVARY, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 10期

关键词：

D O I：

10.1063/1.98852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：740 / 742

页数：3

相关论文

共 22 条

[1] CALCULATION OF BULK MODULI OF DIAMOND AND ZINCBLENDE SOLIDS
COHEN, ML
[J]. PHYSICAL REVIEW B, 1985, 32 (12): : 7988 - 7991
[2] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS
CSEPREGI, L
KENNEDY, EF
GALLAGHER, TJ
MAYER, JW
SIGMON, TW
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240
[3] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON
CSEPREGI, L
MAYER, JW
SIGMON, TW
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93
[4] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS
GAMO, K
INADA, T
MAYER, JW
EISEN, FH
RHODES, CG
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89
[5] ION-BEAM INDUCED EPITAXY OF SILICON
GOLECKI, I
CHAPMAN, GE
LAU, SS
TSAUR, BY
MAYER, JW
[J]. PHYSICS LETTERS A, 1979, 71 (2-3) : 267 - 269
[6] ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS
GRIMALDI, MG
PAINE, BM
NICOLET, MA
SADANA, DK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4038 - 4046
[7] SUBSTRATE ORIENTATION DEPENDENCE OF ENHANCED EPITAXIAL REGROWTH OF SILICON
HO, KT
SUNI, I
NICOLET, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1207 - 1212
[8] SOLID-PHASE EPITAXIAL REGROWTH OF ION-IMPLANTED AMORPHIZED INP
LICOPPE, C
NISSIM, YI
KRAUZ, P
HENOC, P
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (06) : 316 - 318
[9] COMPARISON OF CRYSTAL ORIENTATION DEPENDENCE FOR THE SOLID-PHASE EPITAXIAL PROCESS IN ION-IMPLANTED SI AND GAAS
LICOPPE, C
NISSIM, YI
HENOC, P
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1441 - 1443
[10] RECRYSTALLIZATION KINETICS PATTERN IN III-V IMPLANTED SEMICONDUCTORS
LICOPPE, C
NISSIM, YI
MERIADEC, C
HENOC, P
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (23) : 1648 - 1650