COMPARISON OF CRYSTAL ORIENTATION DEPENDENCE FOR THE SOLID-PHASE EPITAXIAL PROCESS IN ION-IMPLANTED SI AND GAAS

被引：16

作者：

LICOPPE, C

NISSIM, YI

HENOC, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 21期

关键词：

D O I：

10.1063/1.96883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1441 / 1443

页数：3

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