THICKNESS DEPENDENCE OF ETCHING RATE IN DRY PHOTOETCHING OF ORGANIC RESISTS

被引：9

作者：

UENO, N

SUGITA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 09期

关键词：

D O I：

10.1143/JJAP.25.1455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1455 / 1456

页数：2

共 11 条

[1]

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OSGOOD, RM ;

DEUTSCH, TF .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :1018-1020

[3]

EHRLICH DJ, 1983, VLSI ELECTRONICS MIC, V7, P129

[4] DIRECT ENGRAVING ON POSITIVE RESISTS BY SYNCHROTRON RADIATION [J].

ICHIMURA, S ;

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ATODA, N ;

ONO, M ;

HOH, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1076-1079

[5] DEEP UV ABLATION OF PMMA RESISTS [J].

LANAGAN, M ;

LINDSEY, S ;

VISWANATHAN, NS .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L67-L69

[6]

SUGITA K, 1983, PHOTOGR SCI ENG, V27, P146

[7]

SUGITA S, 1984, 1ST SPSJ INT POL C K, P113

[8] DIRECT ETCHING OF RESISTS BY UV-LIGHT [J].

UENO, N ;

KONISHI, S ;

TANIMOTO, K ;

SUGITA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (10) :L709-L712

[9]

Vig J. R., 1979, SURFACE CONTAMINATIO, V1, P235

[10] UV-OZONE CLEANING OF SURFACES [J].

VIG, JR ;

LEBUS, JW .

IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1976, 12 (04) :365-370

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