THE INFLUENCE OF ELECTRODE AREAS ON RADIO-FREQUENCY GLOW-DISCHARGE

被引：18

作者：

KASPER, W ^{[1
]}

BOHM, H ^{[1
]}

HIRSCHAUER, B ^{[1
]}

机构：

[1] SIEMENS AG,RES LABS,W-8000 MUNICH 83,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 09期

关键词：

D O I：

10.1063/1.350820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Argon, hydrogen, and germane plasmas were investigated in a variably configured radio frequency (rf) diode glow-discharge reactor system with a range of rf powers. Plasma parameters such as electron temperature, plasma density, plasma potential, and floating potential were determined and the internal distribution of voltages within the glow discharge was considered. An equivalent circuit for the discharge is presented and fundamental dependence between the voltage ratio and the electrode area ratio of squared power law compared with the usual fourth power law is measured and described. The main goal of this work was to obtain more information about the energy of ion bombardment on the growing film surface.

引用

页码：4168 / 4172

页数：5

共 14 条

[1] GROWTH-PROCESSES OF RF GLOW-DISCHARGE DEPOSITED A-SI-H AND A-GE-H FILMS [J].