EFFECT OF RECYCLING ON THE AXIAL DISTRIBUTION OF COATING THICKNESS IN A LOW-PRESSURE CVD REACTOR

被引:8
作者
COLLINGHAM, ME [1 ]
ZOLLARS, RL [1 ]
机构
[1] WASHINGTON STATE UNIV,DEPT CHEM ENGN,PULLMAN,WA 99164
关键词
D O I
10.1149/1.2096745
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:787 / 794
页数:8
相关论文
共 19 条
[1]  
Aris R., 1975, MATH THEORY DIFFUSIO
[2]  
ASCHER U, 1981, ACM T MATH SOFTWARE, V7, P209, DOI 10.1145/355945.355950
[3]   KINETICS OF THE DEPOSITION OF SILICON BY SILANE PYROLYSIS AT LOW-TEMPERATURES AND ATMOSPHERIC-PRESSURE [J].
BRYANT, WA .
THIN SOLID FILMS, 1979, 60 (01) :19-25
[4]   MODELING OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].
CHARLIER, JP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) :501-504
[5]  
CHRUMA JL, 1975, Patent No. 3900597
[6]   THE DEPOSITION OF SILICON FROM SILANE IN A LOW-PRESSURE HOT-WALL SYSTEM [J].
CLAASSEN, WAP ;
BLOEM, J ;
VALKENBURG, WGJN ;
VANDENBREKEL, CHJ .
JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) :259-266
[7]   UNIFORM DEPOSITION IN CVD REACTORS WITH MOUNTED WAFER CONFIGURATION [J].
HONG, JC ;
LEE, HH .
JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) :711-717
[8]   MODELING OF LOW-PRESSURE DEPOSITION OF SIO2 BY DECOMPOSITION OF TEOS [J].
HUPPERTZ, H ;
ENGL, WL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :658-662
[9]   MODELING AND ANALYSIS OF LOW-PRESSURE CVD REACTORS [J].
JENSEN, KF ;
GRAVES, DB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) :1950-1957
[10]   THE BIFURCATION BEHAVIOR OF TUBULAR REACTORS [J].
JENSEN, KF ;
RAY, WH .
CHEMICAL ENGINEERING SCIENCE, 1982, 37 (02) :199-222