GROWTH AND CHARACTERIZATION OF (111)B INGAAS/GAAS MULTIQUANTUM-WELL PIN DIODE STRUCTURES

被引：11

作者：

DAVID, JPR ^{[1
]}

GREY, R ^{[1
]}

REES, GJ ^{[1
]}

PABLA, AS ^{[1
]}

SALE, TE ^{[1
]}

WOODHEAD, J ^{[1
]}

SANCHEZROJAS, JL ^{[1
]}

PATE, MA ^{[1
]}

HILL, G ^{[1
]}

ROBSON, PN ^{[1
]}

HOGG, RA ^{[1
]}

FISHER, TA ^{[1
]}

SKOLNICK, MS ^{[1
]}

WHITTAKER, DM ^{[1
]}

WILLCOX, ARK ^{[1
]}

MOWBRAY, DJ ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT PHYS,SHEFFIELD S3 7RH,S YORKSHIRE,ENGLAND

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 09期

关键词：

(111)B; INGAAS/GAAS MQW; PIEZOELECTRIC; STRAIN;

D O I：

10.1007/BF02655373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High quality piezoelectric strained InGaAs/GaAs multi-quantum well structures on (111)B GaAs substrates have been grown by solid-source molecular beam epitaxy in a PIN configuration. 10K photoluminescence (PL) shows narrow peaks with widths as low as 3 meV for a 25-period structure while room temperature (RT) PL shows several higher order peaks, normally forbidden, indicating breaking of inversion symmetry by the piezoelectric field. Furthermore, both the 10K PL peak position and the form of the RT PL spectra depend on the number of quantum wells within the intrinsic region, suggesting that the electric-field distribution is altered thereby. Diodes fabricated from these structures had sharp avalanche breakdown voltages (V(bd)) and leakage currents as low as 8 x 10(-6) A/cm2 at 0.95 V(bd), indicating quality as high as in (100) devices.

引用

页码：975 / 982

页数：8

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