NEW HOT-CARRIER-DEGRADATION MODE IN THIN-FILM SOI NMOSFETS

被引：14

作者：

TSUCHIYA, T

OHNO, T

机构：

[1] NTT LSI Laboratories

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 10期

关键词：

D O I：

10.1109/55.464806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new hot-carrier degradation mode peculiar to MOSFET's fabricated on thin-film SOI is described. This degradation mode, which occurs in nMOSFET's more easily than in pMOSFET's, is due to suppression of parasitic bipolar action caused by recombination of excess carriers through hot-carrier-induced front interface-traps. Threshold voltage is significantly shifted by this phenomenon. The reliability lifetime defined by threshold voltage shift and drain current degradation is also discussed, considering the new degradation mode.

引用

收藏

页码：427 / 429

页数：3

相关论文

共 17 条

[1] SINGLE-TRANSISTOR LATCH IN SOI MOSFETS [J].

CHEN, CED ;

MATLOUBIAN, M ;

SUNDARESAN, R ;

MAO, BY ;

WEI, CC ;

POLLACK, GP .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) :636-638

[2] ANALYSIS AND CONTROL OF FLOATING-BODY BIPOLAR EFFECTS IN FULLY DEPLETED SUBMICROMETER SOI MOSFETS [J].

CHOI, JY ;

FOSSUM, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) :1384-1391

[3]

Colinge J.-P., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P817, DOI 10.1109/IEDM.1989.74178

[4] HOT-ELECTRON-INDUCED DEGRADATION OF FRONT AND BACK CHANNELS IN PARTIALLY AND FULLY DEPLETED SIMOX MOSFETS [J].

CRISTOLOVEANU, S ;

GULWADI, SM ;

IOANNOU, DE ;

CAMPISI, GJ ;

HUGHES, HL .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (12) :603-605

[5] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J].

HU, CM ;

TAM, SC ;

HSU, FC ;

KO, PK ;

CHAN, TY ;

TERRILL, KW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :375-385

[6]

MCDAID LJ, 1990, P IEEE SOS SOI TECH, P141

[7] PRACTICAL REDUCTION OF DISLOCATION DENSITY IN SIMOX WAFERS [J].

NAKASHIMA, S ;

IZUMI, K .

ELECTRONICS LETTERS, 1990, 26 (20) :1647-1649

[8] HOT-CARRIER-INDUCED DEGRADATION OF THE BACK INTERFACE IN SHORT-CHANNEL SILICON-ON-INSULATOR MOSFETS [J].

OUISSE, T ;

CRISTOLOVEANU, S ;

BOREL, G .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (06) :290-292

[9] NEW HOT-CARRIER INJECTION AND DEVICE DEGRADATION IN SUB-MICRON MOSFETS [J].

TAKEDA, E ;

NAKAGOME, Y ;

KUME, H ;

ASAI, S .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (03) :144-150

[10] HOT-CARRIER-INJECT OXIDE REGION IN FRONT AND BACK INTERFACES IN ULTRA-THIN (50 NM), FULLY DEPLETED, DEEP-SUBMICRON NMOS AND PMOSFETS/SIMOX AND THEIR HOT-CARRIER IMMUNITY [J].

TSUCHIYA, T ;

OHNO, T ;

KADO, Y ;

KAI, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (12) :2351-2356