CHARACTERIZATION OF SURFACE-STATES IN MOS CAPACITORS BY A MODIFIED DLTS TECHNIQUE

[1] SI-SIO2 INTERFACE STATE SPECTROSCOPY USING MOS TUNNELING STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (09) : 809 - 817

[2] ENERGY-LEVELS IN SILICON [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228

[3] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[4] A SENSITIVE AND INEXPENSIVE SIGNAL ANALYZER FOR DEEP LEVEL STUDIES [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (04): : 464 - 467

[5] ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 802 - 804

[6] PROPERTIES OF THE GOLD RELATED ACCEPTOR LEVEL IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (01): : 317 - 323

[7] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 221 - +

[8] TEMPERATURE AND ENERGY DEPENDENCES OF CAPTURE CROSS-SECTIONS AT SURFACE-STATES IN SI METAL-OXIDE-SEMICONDUCTOR DIODES MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3504 - 3508

[9] CHARACTERISTICS OF CR-SIO2-NSI TUNNEL-DIODES [J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 143 - 152

[10] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022

[1] SI-SIO2 INTERFACE STATE SPECTROSCOPY USING MOS TUNNELING STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (09) : 809 - 817

[2] ENERGY-LEVELS IN SILICON [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228

[3] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[4] A SENSITIVE AND INEXPENSIVE SIGNAL ANALYZER FOR DEEP LEVEL STUDIES [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (04): : 464 - 467

[5] ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 802 - 804

[6] PROPERTIES OF THE GOLD RELATED ACCEPTOR LEVEL IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (01): : 317 - 323

[7] INTERFACE STATES IN MOS STRUCTURES WITH 20-40 A THICK SIO2 FILMS ON NONDEGENERATE SI [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 221 - +

[8] TEMPERATURE AND ENERGY DEPENDENCES OF CAPTURE CROSS-SECTIONS AT SURFACE-STATES IN SI METAL-OXIDE-SEMICONDUCTOR DIODES MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3504 - 3508

[9] CHARACTERISTICS OF CR-SIO2-NSI TUNNEL-DIODES [J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 143 - 152

[10] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3014 - 3022