PROPERTIES OF THE GOLD RELATED ACCEPTOR LEVEL IN SILICON

被引:16
作者
KALYANARAMAN, V
KUMAR, V
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 70卷 / 01期
关键词
D O I
10.1002/pssa.2210700137
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:317 / 323
页数:7
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共 21 条
[1]   THERMAL CAPTURE CROSS-SECTION OF FREE-ELECTRONS AT NEUTRAL GOLD CENTERS IN N-TYPE SILICON [J].
BARBOLLA, J ;
PUGNET, M ;
BRABANT, JC ;
BROUSSEAU, M .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (02) :495-498
[2]   RECOMBINATION PROPERTIES OF GOLD IN SILICON [J].
BEMSKI, G .
PHYSICAL REVIEW, 1958, 111 (06) :1515-1518
[3]   TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J].
BLUDAU, W ;
ONTON, A ;
HEINKE, W .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1846-1848
[4]   ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON [J].
BROTHERTON, SD ;
BICKNELL, J .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) :667-671
[5]   ELECTRON AND HOLE CAPTURE AT AU AND PT CENTERS IN SILICON [J].
BROTHERTON, SD ;
LOWTHER, JE .
PHYSICAL REVIEW LETTERS, 1980, 44 (09) :606-609
[6]  
CHEG JW, 1980, ANN REV MATER SCI, V10, P157
[7]   LIFETIMES AND CAPTURE CROSS SECTIONS IN GOLD-DOPED SILICON [J].
DAVIS, WD .
PHYSICAL REVIEW, 1959, 114 (04) :1006-1008
[8]   TEMPERATURE-DEPENDENCE OF GOLD ACCEPTOR ENERGY-LEVEL IN SILICON [J].
ENGSTROM, O ;
GRIMMEISS, HG .
APPLIED PHYSICS LETTERS, 1974, 25 (07) :413-415
[9]   GOLD AS A RECOMBINATION CENTRE IN SILICON [J].
FAIRFIELD, JM ;
GOKHALE, BV .
SOLID-STATE ELECTRONICS, 1965, 8 (08) :685-+
[10]   DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J].
GRIMMEISS, HG .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :341-376