PROPERTIES OF THE GOLD RELATED ACCEPTOR LEVEL IN SILICON

被引：16

作者：

KALYANARAMAN, V

KUMAR, V

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 70卷 / 01期

关键词：

D O I：

10.1002/pssa.2210700137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：317 / 323

页数：7

共 21 条

[11] A SENSITIVE AND INEXPENSIVE SIGNAL ANALYZER FOR DEEP LEVEL STUDIES [J].

JANSSON, L ;

KUMAR, V ;

LEDEBO, LA ;

NIDEBORN, K .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (04) :464-467

[12] DETERMINATION OF CAPTURE RATE CN OF GOLD ACCEPTOR LEVEL FROM SINGLE INJECTION N+-I-N+ SILICON SCLC DIODES [J].

KASSING, R ;

LENZ, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01) :131-139

[13] DETERMINATION OF TEMPERATURE INDEPENDENCE OF CAPTURE CROSS-SECTION OF GOLD ACCEPTOR LEVEL FOR ELECTRONS IN N-TYPE SILICON [J].

KASSING, R ;

KAHLER, E ;

DUDECK, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01) :141-146

[14]

Lang D. V, 1979, THERMALLY STIMULATED

[15]

LANN DV, 1980, PHYS REV B, V22, P3917

[16] FAST TRANSIENT CAPACITANCE MEASUREMENTS FOR IMPLANTED DEEP LEVELS IN SILICON [J].

NAGASAWA, K ;

SCHULZ, M .

APPLIED PHYSICS, 1975, 8 (01) :35-42

[17] PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE [J].

PALS, JA .

SOLID-STATE ELECTRONICS, 1974, 17 (11) :1139-1145

[18]

QUISSER HJ, 1978, SOLID STATE ELECTRON, V21, P1495

[19] DEGENERACY FACTOR OF GOLD ACCEPTOR LEVEL IN SILICON [J].

RALPH, HI .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) :672-675

[20] BULK AND INTERFACE IMPERFECTIONS IN SEMICONDUCTORS [J].

SAH, CT .

SOLID-STATE ELECTRONICS, 1976, 19 (12) :975-990

← 1 2 3 →