ARSENIC IMPLANTATION IN CVD TUNGSTEN SILICIDE

被引：1

作者：

HARA, T

TAKAHASHI, H

CHEN, SC

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 88卷 / 02期

关键词：

D O I：

10.1002/pssa.2210880249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K131 / K136

页数：6

共 13 条

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[3]

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[9] HEXAGONAL WSI2 IN CO-SPUTTERED (TUNGSTEN AND SILICON) MIXTURE [J].

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[10] DOPANT DIFFUSION IN TUNGSTEN SILICIDE [J].

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